Introducing our high-performance N Channel MOSFET, meticulously engineered for a variety of electronic applications. This component is essential for any circuit requiring low on-resistance and high-speed switching capabilities. Featuring a robust design, our N Channel MOSFET delivers efficient power management, making it ideal for use in medical devices, power supplies, and automation systems. With impressive thermal stability and reliability, this transistor ensures optimal performance even in demanding environments. It's designed to enhance energy efficiency while maintaining exceptional conductivity. Upgrade your projects with our N Channel MOSFET and experience unparalleled efficiency and performance in your electronic applications. Explore the advanced features and specifications to see how this component can elevate your design.
Sure! Here are the specifications for an N-channel MOSFET (generic example):
N-Channel MOSFET Specifications:
- Drain-Source Voltage (Vds): 30 V (8.3 V)
- Gate-Source Voltage (Vgs): ±20 V (±5.1 V)
- Continuous Drain Current (Id): 15 A (66.7 A)
- Pulsed Drain Current (Id,pulse): 30 A (133.4 A)
- Power Dissipation (Pd): 50 W (170.6 W)
- Gate Threshold Voltage (Vgs(th)): 2 - 4 V (0.8 - 1.6 V)
- On-Resistance (Rds(on)): 0.04 ? (0.04 ?)
- Transconductance (gfs): 10 S (10 S)
- Junction-to-Case Thermal Resistance (R?JC): 1.5 °C/W (1.5 °C/W)
- Junction-to-Ambient Thermal Resistance (R?JA): 62 °C/W (62 °C/W)
- Operating Junction Temperature (Tj): -55 to +150 °C (-67 to +302 °F)
- Storage Temperature (Ts): -55 to +150 °C (-67 to +302 °F)
Please note that the values may vary based on the specific MOSFET model. Always refer to the manufacturer's datasheet for precise information.
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