Keysight B1506A Power Device Analyzer
The Keysight B1506A Power Device Analyzer is an advanced testing solution tailored for power electronic circuit designers. This powerful device aids in the selection and evaluation of optimal power semiconductor components, ensuring maximum performance in your designs. With its ability to assess all relevant device parameters across a diverse spectrum of operating conditions, the B1506A is indispensable for any circuit development project.
Comprehensive Testing Capabilities
The B1506A excels in evaluating key IV parameters such as breakdown voltage and on-resistance, alongside three-terminal FET capacitances, gate charge, and power loss. Its robust testing functionality includes:
- Wide operational voltage and current ranges (3 kV and 1500 A)
- Extensive temperature measurement range from -50 to +250 °C
- Proficient fast pulsing capability for precise testing
- Sub-nA level current measurement capability, ensuring high sensitivity
User-Friendly Interface
The unique Easy Test Navigator software interface facilitates intuitive device characterization, mimicking a familiar device data sheet format. This user-friendly approach minimizes the need for extensive training, allowing engineers to efficiently gather and analyze vital data.
Automated Testing with Minimal Errors
The integrated switching circuitry within the test fixture promotes fully automated testing. It seamlessly transitions between high voltage and high current testing, as well as between IV and CV measurements, enhancing the testing experience by minimizing human error with its innovative plug-in style device test fixture socket adapter. Moreover, the B1506A supports automated thermal characterization through its built-in Thermostream control, shielding the measurements from large parasitics associated with traditional cable extensions.
Advanced Measurement Features
The Keysight B1506A stands out with its advanced measurement capabilities:
- Accurate measurement of all IV parameters (Ron, BV, Leakage, Vth, Vsat, etc.)
- Complete measurement of transistor input, output, and reverse transfer capacitances (Ciss, Coss, Crss, Cies, Coes, Cres, Rg) at high bias voltages
- Detailed Qg curve measurement for N-channel MOSFETs and IGBTs
- Evaluation of power loss, encompassing conduction, driving, and switching losses
- Menu-driven user interface crafted specifically for circuit designers, enabling quick and automatic device data sheet generation
- Data sheet characterization mode for rapid evaluations of critical data sheet parameters
- Oscilloscope View for visual verification of pulsed measurement waveforms
- Support for typical semiconductor devices and electronic components prevalent in high-power circuits
